Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation

Abstract

The correlation between conduction and lifetime in HfSiON films has been characterized with reference to the inhomogeneous distribution of defects. The electrical effects that are induced by the nitrogen have been also investigated. The temperature dependence of the leakage current revealed that the inclusion of nitrogen atoms transformed the defect levels, leading to a reduction in leakage current and improved breakdown lifetime. Moreover, it was also found that nitridation leads to a suppression of the dispersion of defects. The characteristics of oxygen vacancies were demonstrated in terms of nitridation effects.