Abstract
We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells byuse of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown byplasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows cleardopant contrast between the core and shell of the nanowire. The growth of magnesiumdoped nanowire shells shows little or no effect on the lattice parameters of theunderlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescencemeasurements of the nanowires show the appearance of sub-bandgap features in theblue and the ultraviolet, indicating the presence of acceptors. Finally, electricalmeasurements confirm the presence of electrically active holes in the nanowires.
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