Abstract
Homoepitaxial growth of SiC on a Si-face (0 0 0 1) 6H-SiC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si 2H 6 and C 2H 4 at temperatures ranging 1000–1450°C while keeping a constant Si/C ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements, and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p–n junctions were obtained on these epitaxial layers, and their I– V characteristics are presented.
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