Abstract
Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial diamond growth without formation of non-epitaxial crystallites. Under these conditions, unintentionally incorporated nitrogen was suppressed well below 1011cm-3. By adding silicon or boron during growth with their ratio to carbon of below 1 ppb, formation of single SiV color center in homoepitaxial diamond and deposition of lightly doped p-layer was achieved with the concentration of 1015cm-3.
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