Abstract
AbstractThe N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the [1010] direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two orders of magnitude as compared with homo-epitaxial films grown on the exact (0001) surface. The features still found on the 4° misoriented sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation and the hexagonal hillocks during the growth process.
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