Homo-epitaxial deposition of CeO2 film by chemical vapour depositionon a CeO2/Ni substrate prepared by electron beam evaporation

Abstract

Crack-free CeO2 films have been grown by chemical vapourdeposition (CVD) on a Ni substrate where a thin CeO2 film was pre-depositedby electron beam (e-beam) evaporation. Homo-epitaxial growth of CeO2 filmby CVD led to the development of a sharp cube texture inherited from a CeO2film pre-deposited by e-beam evaporation. The CeO2 film grown by CVD wasdeposited at 470 °C for 10 min and the film growth rate was measuredas 40 nm min-1. The extra XRD peaks having a relationship with a cubeorientation of 25-28° rotation around the ⟨001⟩ axis,i.e. the surface normal of the Ni substrate, were developed at the Ni/CeO2interface during film deposition. The present results show that thecombination of CVD and e-beam evaporation is useful for the fast deposition ofCeO2 film with a sharp cube texture.