Abstract
A concept of complex reflectivity modulation is proposed based on the electrical control of quantum well exciton resonances that influence the propagation of light in a layered semiconductor structure. By variation in exciton energies, both the intensity and the phase of reflected light can be fully controlled. Unlike previous devices, for full complex light modulation, the design is based on a single device in a single structure. The device allows complete 100$%$ intensity contrast and allows for the construction of small pixel sizes with fast response times.
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