Abstract

The “hologram simulation” concept is put forward to replace the traditional “Three-fields” (including magnetic field, thermal field and force field) notion in simulating aluminum reduction cells. The core of the hologram simulation is to simulate microstructures of the cells’ parameters distribution under various structural and operating conditions. In hologram simulation, the effect of various input information can no longer be treated as single or independent variables, because of the interacting they have with each other. The hologram simulation approach can be used for both static and dynamic analysis of the cells, and it as more suitable to describe the detail working of the cells. In this chapter, the models for several main physical fields including the current field, magnetic field, thermal field, and the molten metal flow field are respectively discussed; moreover, the dynamic simulation method and several calculation models of the current efficiency for aluminum reduction cells also are introduced.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call