Abstract
In this study the capacitance‐voltage (C‐V ) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)‐Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated samples were grown by molecular beam epitaxy technique. The dots were formed during the Stransky‐Krastanov growth mode. Comparison of the C‐V and deep level transient spectroscopy results obtained for both samples allows us to conclude that the 0.26 eV trap observed exclusively for the QD sample can be assigned to some defects in a wetting layer or CdTe/ZnTe interface.
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