Abstract
Optical Deep Level Transient Spectroscopy measurements were performed on Close-Spaced Vapor Transport deposited epitaxial GaAs. Two hole traps HM1 (EV + 0.67 eV) and HM2 (EV + 0.38 eV) were detected. According to Mitonneau et al, classification they were identified as HL2 and HL4. These two levels were attributed to native defects and copper related defects respectively. The optical properties of HM2 were investigated by both electrical and optical Deep Level Optical Spectroscopy. These results confirm the identification of HM2 as a copper related defect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
