Abstract
AbstractMinority carrier transient spectroscopy (MCTS) has been applied for the detection of hole traps in n‐GaN using Schottky diodes. MCTS using 355 nm light emitting diodes is performed under isothermal conditions in the temperature range 280 to 330 K for n‐GaN grown by metalorganic chemical vapor deposition on sapphire. Isothermal MCTS spectra reveal the Ev + 0.86 eV hole trap with the trap concentration of 1.1x1016 cm‐3. The Ev + 0.86 eV hole trap has the higher concentration as compared to electron traps observed by deep level transient spectroscopy. Thus, the isothermal MCTS around room temperature provides a convenient way to evaluate the dominant trap in n‐GaN. It is suggested that the Ev + 0.86 eV hole trap is associated with the VGa‐related defect or carbon‐related defect. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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