Abstract
In order to enable lateral hole injection, a unique structure with a p-type AlGaN injection channel is proposed to replace the conventional deep-ultraviolet light-emitting diode (DUV LED) structure. This type of modification results in the probability of obtaining a 1.65-fold higher light output power when the channel band gap is between the bandgap of quantum-well (QW) and p-AlGaN, which is demonstrated at the current density of 100 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . In comparison, the maximum internal quantum efficiency is increased by 23.43% relative to the traditional AlGaN DUV LED structure with a 10.27% reduced efficiency droop at 100 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The effective injection of holes would provide greater confinement of electrons. The ultimate effect would result in superior radiative recombination of the proposed DUV LED structure inside the QW.
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