Abstract
The transit of excess holes through 25-μm Teflon films has been observed. The holes are generated by electron-pulse ionization in the near-surface region of the samples. From the transit time we determine a mobility of 2×10−9 cm2/V s, independent of field, carrier density, penetration depth of the primary electrons, and length of the electron pulse. Results are discussed in terms of the conventional concept of trap-modulated mobility and of the alternative theory of dispersive hopping.
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