Abstract
We examined the hole transport characteristics of Si nanowire (NW) p-channel metal-oxide semiconductor with [100] channel orientation [4.8 nm × 4.7 nm (thickness × width)] having different lengths (2 μm, 5 μm, 10 μm, and 20 μm). The NW devices fabricated by the top-down method using ultra-thin Si on insulator exhibit electrical transport properties appropriate for future high-end applications. Interestingly, various oscillation behaviors were observed in the transconductance characteristics of the device. A comparison with two-dimensional-like nano devices provides useful information for further understanding one-dimensional (1D) transport properties and such oscillation behaviors. Thus, a practical hole transport model for 1D long-channel devices is presented.
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