Hole mobility in wurtzite InN

Abstract

Hole mobility in wurtzite InN at low electric fields is studied by an ensemble Monte Carlo calculation. Scatterings of holes by polar optical phonons, nonpolar optical phonons, acoustic phonons, ionized and neutral impurities, and threading dislocations are taken into account. Mobility of holes is ∼220 cm2/V s at 300 K in the InN, where holes are only scattered by the lattice. It decreases to 20–70 cm2/V s when the present quality of InN with threading dislocation density of ∼1010 cm−2 and residual donor concentration of over 1017 cm−3 is considered. The calculated mobility coincides well with the recent experimental observation.