Abstract
AbstractThe rapid development of 2D magnetic materials has opened new possibilities in the field of spintronics. CrTe2, a 2D material with perpendicular magnetic anisotropy (PMA) and ferromagnetic transient temperature near room temperature, holds promise for various applications. However, the underlying mechanism responsible for its global magnetism remains unclear. This work focuses on investigating the magneto‐transport properties of ultra‐thin CrTe2 Field Effect Transistor (FET) under the influence of top gate biases. The application of gate voltage ranging from 25 to −15 V tunes its coercivity (HC) and Curie temperature (TC) (from 152 to 191 K). Notably, a linear correlation is observed between the TC and the hole concentration () in the CrTe2 film, indicating the involvement of the Ruderman–Kittel–Kasuya–Yosida interaction. This experimental analysis sheds light on the mechanism of the CrTe2’s ferromagnetism and paves the way for future advancements and applications in this material.
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