Abstract

This Letter, reports the hole-injection characteristics of an ultra-thin, transparent gold electrode derivatized with a thiolate polar monolayer into the amorphous molecular semiconductor, N, N′-bis(3-methylphenyl)- N, N′diphenyl-1,1′biphenyl- 4,4′-diamine (TPD). Thermionic emission with image force lowering gives an excellent description of the injection mechanism over a large range of temperatures and electric field strengths, yielding a zero field Schottky barrier height of ∼0.4 eV. This study demonstrates that derivatizing the surface of this novel gold electrode with a 4-nitrophenylthiolate monomolecular layer is an effective means of circumventing the abrupt negative vacuum level shift, which forms when TPD is thermally deposited onto gold electrodes.

Full Text

Published Version

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.