Abstract
Hole-doping of monolayer SnO, which should result in a stable ferromagnetic order in this two-dimensional material, is theoretically studied, using first-principles simulations, based on density functional theory. Sn vacancies are predicted to behave like acceptors and to produce a spin-polarized gap state near the valence band edge. The formation energy of these defects is relatively low, especially under oxygen-rich growth conditions. Extrinsic doping of monolayer SnO is next investigated. It is found that the substitution of tin by indium as well as the substitution of oxygen by nitrogen should result in p-type doping of the material.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Electrochemical Society Transactions
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
