Abstract
Density of states and group velocity for the valence bands of ${\mathrm{SiO}}_{2}$ are worked out as a function of energy. The purpose is to provide reliable parameters for the calculation of hole transport within gate oxides, which is acquiring more relevance in view of the application to advanced MOS devices. It is shown that the applicability of the effective-mass concept to hole transport in ${\mathrm{SiO}}_{2}$ is much more restricted than in other materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
