Abstract
We study acceptor-type defects in grown by molecular beam epitaxy. The hole density of the layers, from capacitance-voltage measurements of Schottky diodes, is higher than that of the binary alloys and increases linearly up to 1019 with the Bi content. Positron annihilation spectroscopy and ab initio calculations show that both Ga vacancies and Ga antisites contribute to the hole density and that the proportion of the two acceptor-type defects vary in the layers. The modification of the band gap due to Bi incorporation as well as the growth parameters are suggested to affect the concentrations of acceptor-type defects.
Highlights
Adding Bi to III–V semiconductors has shown to provide a means for effectively tuning the band gap thereby making such alloys attractive for optoelectronic devices [1,2,3,4]
The measured hole density as a function of Bi content for the studied GaSb1−xBix layers is illustrated in figure 1
We have studied the relation between the hole density and acceptor-type defects in GaSb1−xBix epitaxial layers
Summary
Adding Bi to III–V semiconductors has shown to provide a means for effectively tuning the band gap thereby making such alloys attractive for optoelectronic devices [1,2,3,4]. In addition to the band gap reduction, the Bi-containing alloys are in general of interest due to their large spin–orbit splitting [5, 6]. For GaSb1−xBix, a band gap reduction of ∼30 meV/% Bi has been reported [7,8,9] making the material a promising candidate for applications in the 2–5 μm spectral region.
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