Abstract

By low-temperature annealing of n-CdTe substrates in aqueous suspensions of LiNO3 and Ca(NO3)2 salts pconductivity layers are created. The estimated concentration of free holes in diffusion layers at 300K is (5-50)∙1015 см-3

Highlights

  • Despite the fact that cadmium telluride has bipolar conductivity, obtaining low-resistance crystals or ilayers of p-type layers continues to be an urgent task [1,2]

  • In particular, may be the technology of introducing doping impurities from an aqueous suspension of its salts, which was successfully implemented by the authors [4] to obtain a hole conductivity of. 1 Ohm-1 cm-1 at 300 K using Ba (NO3)2 salt

  • Ca is an element of the second group that plays the role of isovalent impurity (IVI) in cadmium telluride, which, unlike the usual Litype impurity, does not always form local levels in the forbidden semiconductor zone, but can stimulate the generation of own point defects (OPD) of the donor or acceptor type [6]

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Summary

Introduction

Despite the fact that cadmium telluride has bipolar conductivity, obtaining low-resistance crystals or ilayers of p-type layers continues to be an urgent task [1,2]. This is due to the need for p- n junctions with low series resistance, as well as the problem of creating low-resistance ohmic contacts to high-resistance pCdTe. In addition, p-CdTe thin films are promising for creating photocells based on CdS/CdTe, ITO/CdTe heterostructures, etc. In particular, may be the technology of introducing doping impurities from an aqueous suspension of its salts, which was successfully implemented by the authors [4] to obtain a hole conductivity of. The described method is used for doping CdTe with other impurities, which are Li and Ca

Samples and research methods
Discussion of research results
Conclusions

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