Abstract
ABSTRACT Single and double heterostructure AlGaAs red LEDs, p+–N and n+–P AlGaAs-GaAs heterodiodes have been fabricated by liquid phase epitaxy (LPE). The presence and characteristics of deep centres located near the injection-active boundaries has been studied. Capacitance-temperature, electroluminescence, photocurrent and deep-level transient spectroscopy (DLTS) measurement have been performed. In n+–P structures a new Zn-related deep hole majority trap, at about 0·3 eV above the valence band, was found. In all p+–N heterojunctions, in addition to a majority electron trap related to the Te-dopant (DX defects), some acceptor-like traps have been detected.
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