Abstract
A linear correlation between 100ns TLP and the second HMM peak current was found for several common types of protection devices. A detailed thermal analysis offers a straightforward explanation of the correlation factor in terms of pulse duration. It is found that the thermal effect of the first HMM peak can be ignored. The impact of non-thermal failure mechanisms, e.g. gate oxide breakdown due to an over-voltage, which may limit the validity of the correlation are explored for a complete system, which includes additional components. The results from this investigation are essential for proper application of the System-efficient ESD Design (SEED) methodology.
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