Abstract
Different from the static (power-off) nonvolatile property of a memristor, the history erase effect of a memristor is a dynamic characteristic, which means that under the excitation of switching or different signals, the memristor can forget its initial value and reach a unique stable state. The stable state is determined only by the excitation signal and has nothing to do with its initial state. The history erase effect is a desired effect in memristor applications such as memory. It can simplify the complexity of the writing circuit and improve the storage speed. If the memristor’s response depends on the initial state, a state reset operation is required before each writing operation. Therefore, it is of great theoretical and practical significance to judge whether the memristor has a history erase effect. Based on the study of the history erase effect of real memristors, this paper focuses on the history erase effect of a Hewlett-Packard (HP) TiO2 memristor and the Self-Directed Channel (SDC) memristor of Knowm Company. The DC and AC responses of the HP TiO2 memristor are given, and it is pointed out that there is no AC history erase effect. However, considering the parasitic memcapacitance effect, it is found that it has the effect. Based on the theoretical model of the SDC memristor, its history erase properties with and without considering parasitic effects are studied. It should be noted that this study method can be useful for other materials such as Al2O3 and MoS2.
Highlights
Different from the static nonvolatile property of a memristor, the history erase effect of a memristor is a dynamic characteristic, which means that under the excitation of switching or different signals, the memristor can forget its initial value and reach a unique stable state
The state variable w in Equation (11) is a function of the initial value w(0), under the excitation of positive and negative DC voltages, the memristor rapidly reaches two states, namely low resistance RON and high resistance ROFF, which are independent of the initial value, indicating that the memristor has a history erase effect
It can be seen that under the excitation of positive and negative DC voltages, the memristor state variables w tend to D and 0, respectively; that is, the memristor is in RON and ROFF states, respectively, and its response is independent of the initial value
Summary
It should be noted that not all memristors have a history erase effect. It can be proved that the ideal generic memristor does not have a history erase effect. The lack of history erase effects in ideal generic memristors was already revealed in [10]; we rederive the results here by another method. Where x is the state variable, and vm and im are the voltage and current across both ends of the memristor, respectively. The response of the memristor depends on the initial state (we assume G ( x0 ) 6= constant). The memristor flux response φm is related to the initial state φm0 , the memristor has no history erase effect
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