History Erase Effect in a Non-Volatile Memristor

Abstract

This work presents a detailed study of the nonlinear dynamics of a tantalum oxide memristor recently fabricated at Hewlett Packard Labs. Our investigations uncover direct current, quasi-static, and alternating current behavior of the nanodevice. A thorough study of the dynamics emerging in the nanoscale element under various input/initial condition combinations reveals a fundamental property of the tantalum oxide device, which was unnoticed so far. The initial condition has no effect on the steady-state operation of the memristor under non-zero input. This property, known as fading memory in system theory, implies the uniqueness of asymptotic behavior of the memristor. The progressive input-induced memory erase phenomenon is solely determined by the switching dynamics of the nanodevice, mathematically described by the state evolution function, which governs the rate of evolution of the memristor state. A constant-sign DC input will activate on or off switching dynamics only. Consequently, due to the limited on/off memductance ratio, the memristor will asymptotically attain a fully-conducting or highly-resistive state, irrespective of the initial condition. Most interestingly, under AC periodic excitations, it is the pronounced asymmetry in the state dependence of on and off switching processes which is at the basis of the reported history erase effect. It is important to point out that this novel fading memory phenomenon does not compromise the nonvolatile behavior of the nanostructure. In fact, despite the device may be stimulated so as to forget its past history, it still has a continuum of analog nonvolatile memory states.