HiSIM_IGBT2: Modeling of the Dynamically Varying Balance Between MOSFET and BJT Contributions During Switching Operations

Abstract

The second generation of the compact HiSIM_IGBT model for circuit simulation is reported. HiSIM_IGBT2 is developed on the basis of an adapted version of the high-voltage mosfet model HiSIM_HV and solves the Poisson equation along the complete device iteratively in a consistent way. The major HiSIM_IGBT2 improvement concerns the description of the mosfet contribution to the dynamically varying resistance effect in the base-region of the bipolar transistor (BJT) part of the insulated gate bipolar transistor (IGBT). An important finding is that the IGBT mostly operates under the high-injection condition, namely, under the drift mechanism for the transport of the injected carriers, and that a subtle balancing of the contributions from bipolar control and mosfet control of the IGBT is required. The developed model is verified with 2-D-numerical device simulation to accurately reproduce the potential distribution within the IGBT. Therefore, the specific IGBT features, induced by the highly resistive base region under the high-injection condition, are self-consistently captured. The developed model is proven to provide stable circuit simulations with accurate reproduction of the switching performances.