HIPS-GLAD core shell nanorod array photodetectors with enhanced photocurrent and reduced dark current

Abstract

Vertically aligned core/shell nanorod array photodetectors were fabricated by high pressure sputter (HIPS) deposition of copper indium sulfide (CIS) films on glancing angle deposited (GLAD) indium sulfide (In2S3) nanorods. For comparison, we also studied nanorod photodetectors with conventional low pressure sputtered (LPS) CIS film coatings and counterpart thin film devices incorporating HIPS or LPS-CIS on In2S3 films. HIPS-GLAD core/shell photodetectors have shown a superior photocurrent density response along with lowest dark current density. Photoresponsivity defined with the photocurrent density/dark current density ratio γ = |Jph/Jdark| was about ∼1820 for HIPS-GLAD nanorod devices, which is several orders of magnitude higher compared to those of LPS-CIS thin film (γ ∼ 2) and HIPS-CIS thin film (γ ∼ 9) devices, and also about four-fold higher than LPS-CIS nanorod devices (γ ∼ 490). Enhanced photoresponsivity is attributed to the porous microstructure and improved conformality of HIPS-CIS film around the In2S3 nanorods confirmed by SEM and EDS measurements. Due to randomization of the sputtered flux at higher working gas pressures, HIPS can provide a more conformal while at the same time a voidy low-density film around nanostructured surfaces. Reduced interelectrode distance and improved p–n junction interface due to the more uniform conformality of HIPS-CIS result in a higher photocurrent in our HIPS-GLAD devices. In addition, the voids in HIPS-CIS film as a result of its porous nature can behave as highly resistive spots that lower the dark current. Therefore, we have demonstrated that by utilizing a simple and low-temperature HIPS-GLAD method, high-photocurrent and low-dark-current photodetectors can be achieved by controlling the conformality and microstructure of a shell layer around nanorod arrays. HIPS shell coating method can be extended to almost any type of nanostructured substrate.