Abstract
The paper reports on the results of the studies of static and dynamic characteristics of 4H-SiC drift step recovery diodes (DSRDs) assembled in diode stacks. Switching performance of single dies has been simulated and experimentally confirmed. It was established that the switching process is determined primarily by the incomplete ionization of acceptors in 4H-SiC and by the bandgap narrowing in heavily doped emitters. Based on the simulation results the optimized die size has been selected. For DSRD stacks of 4 and 8 dies I-V and C-V measurements are reported. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 10.5 kV with the leading edge length of 900 ps were demonstrated.
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