High-voltage lateral RESURF MOSFETs on 4H-SiC

Abstract

Owing to high critical electrical breakdown field and large energy gap, SiC has been established as the most promising candidate for high-voltage power semiconductor devices. In the past few years, several high-voltage vertical MOS devices have been demonstrated in SiC, whereas only a 2.6 KV lateral SiC MOSFET has been reported so far. Lateral integrable REduced SURface Field (RESURF) devices are key building blocks for high-voltage power ICs. In this work, we present the first experimental demonstration of a n-channel lateral RESURF MOSFET fabricated on 4H-SiC. The devices exhibit a blocking voltage in excess of 1200 V with a best specific on-resistance of 4 ohm-cm/sup 2/.