Abstract
In the present paper a concise review is given of the application of positron lifetime measurements to the study of high-temperature vacancies in intermetallic compounds (F 76.3Al 23.7), in metal oxides (NiO), in elemental semiconductors (Si, Ge), and of the oxygen loss or uptake in YBa 2Cu 3O 7−δ. Investigations of free volumes in elemental melts (Al, In, Ge) are included.
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