Abstract
AbstractThe electrical parameters of III‐V semiconductor devices were measured at cryogenic temperatures. These data were used for the accurate design of high‐temperature superconductor (HTS)III‐V hybrid microwave circuits. A number of such hybrid circuits, including amplifiers, oscillators, balanced mixers, and a dual channel receiver front end were designed and fabricated. Some of the test data for these circuits are presented. © 1993 John Wiley & Sons, Inc.
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