Abstract
High-temperature stable and smooth gate materials are required for self-aligned GaAs metal-semiconductor field effect transistor devices processing. Furthermore, the high Schottky barrier is beneficial to the GaAs digital logic circuits based on the enhancement mode field effect transistors. We report the high-temperature (up to 900 °C) stable MoAl2.7 Schottky contacts to n-GaAs with enhanced barrier heights from 0.67 to 0.98 V and low values of ideality factors after annealing. The surface of annealed contact is lustrous and smooth. The epitaxial AlxGa1−xAs layer, which induces the enhanced barrier height, at the interface of MoAl2.7/n-GaAs contact, has been clearly identified by the high-resolution cross-sectional transmission electron microscopy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
