Abstract
It is shown that the Vlasov model for a solid describes the complexing processes when growing real crystals with allowance for the thermal growth conditions. It makes it possible (along with the classical theory of nucleation and growth of second-phase particles in solids) to calculate the defect crystal structure that was formed during the growth. It is established that the high-temperature impurity precipitation is directly related to the subsequent transformation of the defect structure when manufacturing of silicon devices. A qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon. It is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.
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