High-temperature photoelectronic transport behavior of n-TiO2 nanorod clusters/p-degenerated boron-doped diamond heterojunction

Abstract

N-TiO2 nanorod clusters (Ncs)/p-degenerated boron-doped diamond (n-TiO2 Ncs/p-DBDD) film heterojunction was prepared by hydrothermal method, and the photoelectric properties depending on temperature dependence were tested. Three distinct emission peaks of 402 nm, 429 nm and 454 nm were detected by the photoluminescence (PL) test under 355 nm ultraviolet light and excited in the blue-green region light. The heterojunction exhibited good rectification characteristics and thermal stability from room temperature to 180 °C. The forward current first decreases and then increases with increasing temperature. The 160 °C is considered to be the ideal high temperature for the best performance of the heterojunction, with the rectification ratio reaching 20.667. The carrier transport mechanisms and tunneling process of n-TiO2 Ncs/p-DBDD heterojunction with temperature are analyzed in detail through the established band structure diagram. This study provides an effective way method for the potential development of high-temperature stable optoelectronic devices.