Abstract
• Oxygen migration occurs at the interface due to the stronger oxygen affinity of Al. • Continuously tunable strain can be generated by adjusting the thickness of SAO. • In-plane tensile strain would stabilizes d x 2 -y 2 occupancy and increases T c . To achieve a flexible single-crystal multifunctional membrane, the freestanding process of a rigid epitaxial transition metal oxide thin film via a buffered water-dissolution sacrificial layer has attracted reasonable attentions. Owing to the difference in chemical potential, specific element affinity, and lattice constant between the target membrane and the sacrificial layer, the freestanding process may cause an indelible change of physics property once the target thin film is sensitive to the above factors. Here, the heterostructures composed of the generally adopted sacrificial layer Sr 3 Al 2 O 6 (SAO) and LaMnO 3 (LMO) have been systematically investigated. The electrical and magnetic properties of LMO show extreme sensitivity to the thickness of SAO ( t SAO ). Then we have also found that LMO/SAO heterostructures can exhibit the coexistence of two ferromagnetic phases, the significantly enhanced Curie temperature ∼ 342 K, and the large magnetoresistance -23.3% at 300 K, which is similar to the optimal-doped manganite such as La 2/3 Sr 1/3 MnO 3 . X-ray diffraction results show that continuously tunable strain from out-of-plane tension to relaxation and then to compression can be generated by adjusting t SAO . This strain can stabilize the migrated oxygen from LMO to SAO, which is induced by the large oxygen affinity difference between B-site Mn and Al. It is believed that these unexpected electrical/magnetic phenomena are originated from the combined effects of interfacial element diffusion and strain. Our study provides a strategy for designing new magnetic phases, and a reference for the fundamental understanding of strongly correlated transition metal oxide systems in the freestanding process.
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