Abstract
Microstructure, phase transition and dielectric properties of Yb-doped Bi0.5Na0.5TiO3 (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a±15% tolerance was greatly broaden until 500°C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528°C and a low dielectric loss (<0.025) from 154 to 356°C, indicating that it is a promising material for applications in high-temperature capacitor.
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