High-Temperature and High-Frequency Operation of 1.3 μm AlGaInAs ∕ InP Laser Diodes Using Silicon Oxide Planarization

Abstract

In this article, a self-terminated oxide polish (STOP) planarization technique is utilized to fabricate high-temperature and high-speed ridge-waveguide laser diodes (LDs). The as-cleaved LDs fabricated by this STOP technique exhibit a threshold current of 8.5 and , and a light output power of 27 and at for 0 and , respectively. The characteristic temperature is from 0 to and from 80 to . The full width at half maximum of the lateral far-field angle is for the conventional ridge LDs and reduces to for the LDs by the STOP technique. The modulation bandwidth at of the LDs can reach 16.9 at and at .