Abstract
A fast proximity effect correction system for electron-beam projection lithography is developed. The following techniques are investigated to improve the performance; the patterns in each 250-µm-square subfield into which the original layout data is split, are corrected in parallel by a cluster system. Several subfields are processed at a time on one cluster node. Actual device data of a 70 nm system-on-a-chip is corrected by our proximity effect correction system to demonstrate its performance. The processing time for the proximity effect correction is reduced to 3.86 h from 60 h not only by using a cluster system with a 248 MHz processor ×8 nodes but also by processing 4×4 subfields simultaneously.
Published Version
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