Abstract
The authors report very high-speed GaN-based ultraviolet photodetectors using a pin device structure. The best devices have rise times of ~90 ps and bandwidths of ~1.6 GHz at –30 V. This is the fastest speed for a GaN-based photodetector reported to date.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
