High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

K Maezawa,M Yamamoto,K Arai,T Otsuji,H Matsuzaki

doi:10.1109/drc.1997.612488

High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

K Maezawa, M Yamamoto + Show 3 more

https://doi.org/10.1109/drc.1997.612488

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Publication Date: Jun 23, 1997

Citations: 8

Affiliation: NTT (Japan)

#Monostable-bistable Transition Logic Element #Flip-flop + Show 8 more

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Abstract

Resonant tunneling (RT) devices attract much attention because of their potential for high-speed operation as well as their high functionality, which leads to lower power dissipation. We have developed a highly functional logic gate, called MOBILE (monostable-bistable transition logic element), which exploits the negative differential resistance (NDR) of the RT phenomenon. In this paper, we demonstrate the high-speed operation-up to 18 Gb/s-of the MOBILE flip-flop (FF) circuit at room temperature. The present result indicates the promise of MOBILE-based FF circuits for high-speed digital applications.

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