High-speed epitaxial growth of BaTi2O5 thick films and their in-plane orientations

Abstract

Epitaxial BaTi2O5 (BT2) thick films were prepared on (100), (110) and (111) MgO single-crystal substrates by laser chemical vapor deposition. (010)- and (112)-oriented BT2 thick films grew epitaxially on (100) and (110) MgO substrates at deposition temperatures of 1326–1387K and 1324–1383K, respectively. On the (111) MgO substrate, BT2 thick film showed (3 1 3¯) and (1 1 3¯) co-orientations at 1337–1353K. Epitaxial BT2 thick films had a columnar structure in cross-section and the deposition rate reached 42μmh−1. The typical in-plane orientations of the epitaxial BT2 films were BT2 [2 0 1¯]//MgO [0 1¯ 0] for BT2 (010)//MgO (100), BT2 [2 0 1¯]//MgO [001] for BT2 (112)//MgO (110), BT2 [101]//MgO [0 1¯ 1] for (3 1 3¯) BT2//MgO (111), and BT2 [301]//MgO [0 1 1¯] for (1 1 3¯) BT2//MgO (111).