High-Speed Bulk Unipolar Structures in Silicon

Abstract

Some years ago, hot electron transistors with high current gain and good power gain were made in silicon using ion implantation doping [1]. These monolithic hot electron transistors were based on the fact that the bulk unipolar diode, in particular the camel diode, is an efficient collector of hot electrons. In this case the hot electrons were generated using a reverse biased, barrier raised Schottky diode. The F T of these devices was ≈3 GHz and in good agreement with that calculated, the major factor determining F T being the charging time of the tunnel emitter. To improve the frequency response, a low capacitance unipolar diode emitter is required and the barrier heights of the unipolar diode have to be controlled very precisely.KeywordsBarrier HeightGallium ArsenideSchottky DiodeHigh Frequency ResponseEfficient CollectorThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.