Abstract
Monolithic integration of an InGaAsP/InGaAs multiple quantum well (MQW) distributed-feedback (DFB) laser with a high-speed InGaAs/InAlAs MQW intensity modulator is demonstrated. A 3-dB bandwidth. in excess of 16 GHz and low-drive-voltage operation (4.0 V) for a 20-dB on-off ratio are obtained. Good coupling efficiency between an MQW DFB laser and an MQW modulator is accomplished using hybrid crystal growth of MO-VPE and MBE. >
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