Abstract
A high-speed and high-output-peak-voltage edge-illuminated refracting-facet photodiode has been developed by employing a thin absorption layer. The fabricated RFPD shows a responsivity as high as 0.69 A/W even with an absorption layer as thin as 0.43 µm, a maximum 3 dB bandwidth of 66 GHz, and a high-output peak voltage of > 2.5 V.
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