Abstract
ABSTRACTA technique for making rapidly-scanned, high-spatial resolution measurements of minority-carrier diffusion length is applied to the characterization of polycrystalline GaAs. Measurements on a large-grained n-type epitaxial layer show gradual variations of hole diffusion length from 0.1µm to l.lµm across the wafer as well as occasional small step changes at grain boundaries. By trading resolution for speed, the technique would be well suited to the nondestructive evaluation of large-area epitaxial layers.
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