Abstract
Herein, a CuSCN/Ga2O3 heterojunction device was fabricated by spin-coating and metal-organic chemical vapor deposition (MOCVD) methods. Under the irradiation of 254 nm deep ultraviolet (DUV) light with an intensity of 1000 μW/cm2, the device shown high sensitivity and favorable self-powered performances with photo-to-dark current ratio (PDCR) of 1.29 × 104, photo responsivity (R) of 5.5 mA/W, rejection ratio (R270nm/R600nm) of 4.33 × 103, and specific detectivity (D∗) of 3.8 × 1011 cm Hz1/2W−1 (Jones) at −5 V. In addition, the device has a rise time of 0.45 s and 3.80 s, and a decay time of 0.26 s and 0.26 s. In general, the CuSCN/Ga2O3 heterojunction prepared in this work may well be a potential candidate for achieving a self-powered and high-performance DUV photodetector.
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