Abstract
This paper reports characterization of n-type strained InGaAsP/InP multiple quantum well (MQW) structures, grown by solid source molecular beam epitaxy (MBE), using high-resolution X-ray diffraction. It was found that well-defined periodic satellite peaks up to 20 orders and the Pendellösung fringes appeared between the satellite peaks were observable, indicating a very high crystalline quality of the MQW structures. The data extracted from the rocking curves, including position and FWHM of the zero-order peak, the angle separation between diffraction peaks and the intensity of the first-order peak, indicate that high-quality InGaAsP/InP MQW structures with controllable well width and sharp interfaces can be successfully grown using all solid sources, and the well width has no significant effect on the quality of the interfaces. These observations are in good agreement with the simulated results using dynamical X-ray theory.
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