Abstract
There are many methods of modulation spectroscopy which have been applied with success to the study of interband critical point structure in crystalline semiconductors under equilibrium conditions. We have used the sensitivity afforded by presently available wavelength tunable cw picosecond dye lasers to perform excite-probe spectroscopy of electronic excitations near lowest interband resonances in GaAs, Ga1−xInxP, and the semimagnetic semiconductor Cd1−xMnxTe. From the time resolved optically modulated spectra new information has been obtained about the character and relaxation of free carriers, impurity and exciton states, and electronic spin-polarization.
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