Abstract
The structural parameters of MBE grown modulated semiconductor structures composed of AlAs/GaAs and Ga 0.47In 0.53As/Al 0.48In 0.52In 0.52As are investigated by high-resolution doublecrystal X-ray diffraction. A semi-kinematical approximation of the dynamical X-ray diffraction theory is used to analyze the observed diffraction curve. Comparison of experimental and theoretical data yields information on strain distribution, variation of the period, chemical composition homogeneity, and quality of the heterointerfaces. Interface broadening and lattice period variation less than one lattice constant can be detected.
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