High-resolution core-level spectroscopy of Si(100)c(4 × 2) and some metal-induced Si(111)√3 × √3 surfaces

Abstract

High-resolution core-level spectroscopy has been applied to the Si(100)c(4 × 2) surface. A correct decomposition of the Si 2p spectrum of the clean surface is important for studies of adsorption of different species and the formation of various surface reconstructions. A very well-resolved Si 2p spectrum is presented for the Si(100)c(4 × 2) surface. The decomposition of this spectrum verifies the original decomposition scheme introduced by Landemark et al (Landemark E, Karlsson C J, Chao Y-C and Uhrberg R I G 1992 Phys. Rev. Lett. 69 1588). Core-level spectra of some metal-induced Si(111)√3 × √3 surfaces are also presented. A comparison is made between the √3 × √3 reconstructions formed on Si(111) by In, a group III atom, and by Sn, a group IV atom. Both the 4d core levels of the adatoms and the Si 2p core-level spectra are discussed. Different kinds of deviation from an ideal surface may introduce a significant broadening of the core-level spectra. The effect of additional Ag atoms is discussed in the case of the Ag/Si(111)√3 × √3 surface. By reducing the surplus of Ag atoms on this surface, a Si 2p spectrum with extremely narrow components has been obtained.